| Submit Press Release
| Submit Website
(Chicago.CityRegions.Com, March 20, 2017 ) According to the new market research report "Super Junction Mosfet Market by FAB Technology (Multiple-Epitaxy, Deep-Trench), Packaging Technology Material (Substrate, Transition Layer, Electrode), Application (Power Supply, Display, Lighting, EV/HEV, Industrial) & by Geography- Global Trends & Forecasts to 2013 - 2020", published by MarketsandMarkets, the SJ-MOSFET market is projected to cross $2.20 Billion by 2020, growing at a high CAGR from 2013 to 2020.
♦Download PDF Brochure:
The last decade witnessed a well-paced transformation in the MOSFET market. The difficulties identified in MOSFET market like higher sub threshold conductor, increased gate-oxide leakage, increased junction leakage, lower output resistance, and lower process variations brought into market new types of MOSFETS, super junction MOSFET is one of them. Many SJ-MOSFET manufacturing companies have hit the market in producing a reliable and flexible device. All these developments have created demand for better and more stable technology to be used in production.
The characteristics and features of SJ-MOSFET’s like reliability, high performance, high switching frequency, low heat dissipation and low power consumptions are serving to incorporate in different application verticals. Key manufacturing technology like Deep-Trench has been introduced in the market and is likely to allow widespread adoption of SJ-MOSFET by different key manufacturers.
The SJ-MOSFET market is segmented into five categories that include packaging technology, materials, fabrication technology, application, and geography. This report divides the overall market into four main geographical segments, namely, North America, Europe, APAC, and ROW. APAC currently contributes highest in the market growth as compared to the other regions.
The leading companies in the SJ-MOSFET market covered in the report are Alpha omega Semiconductor (U.S.), Fairchild Semiconductor (U.S.), Efficient Power Conversion Corporation (U.S.), Fuji Electric Co. Ltd (Japan), Fujitsu Ltd (Japan), IceMOS Technology Corporation (U.K.), Infineon Technologies AG (Germany), International Rectifiers (U.S.), NXP semiconductors (Netherlands), ON semiconductors (U.S.), ROHM Co., Ltd. (Japan), STMicroelectronics N.V (Switzerland), Toshiba Corporation (Japan), Vishay Intertechnology (U.S.), Renesas Electronics Corporation (Japan).